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SNM101R5TLAQ - Single N-channel Power MOSFET

Description

The SNM101R5TLAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.

Features

  • Drain-Source Withstand Voltage: 100V.
  • Max. RDS(on) : 1.5mΩ @ VGS=10V.
  • Automotive.

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Datasheet Details

Part number SNM101R5TLAQ
Manufacturer SIT
File Size 681.96 KB
Description Single N-channel Power MOSFET
Datasheet download datasheet SNM101R5TLAQ Datasheet
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SNM101R5TLAQ Single N-Channel, 100V, 366A, Power MOSFET FEATURES ➢ Drain-Source Withstand Voltage: 100V ➢ Max. RDS(on) : 1.5mΩ @ VGS=10V ➢ Automotive applications ➢ AEC-Q101 Qualified ➢ Excellent ON resistance ➢ Package TOLL-8L ➢ 100% Rg and Avalanche tested ➢ MSL1 PRODUCT APPEARANCE ： TOLL-8L DESCRIPTION The SNM101R5TLAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM101R5TLAQ is in compliance with RoHS.
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