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SNM068R2DRAQ - Single N-channel Power MOSFET

Description

The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.

Features

  • Drain-Source Withstand Voltage: 60V.
  • Max. RDS(on) : 8.2 mΩ @ VGS=10V 13.5 mΩ @ VGS=4.5V.
  • Automotive.

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Datasheet Details

Part number SNM068R2DRAQ
Manufacturer SIT
File Size 728.65 KB
Description Single N-channel Power MOSFET
Datasheet download datasheet SNM068R2DRAQ Datasheet
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SNM068R2DRAQ Single N-Channel, 60V, 60A Power MOSFET FEATURES ➢ Drain-Source Withstand Voltage: 60V ➢ Max. RDS(on) : 8.2 mΩ @ VGS=10V 13.5 mΩ @ VGS=4.5V ➢ Automotive applications ➢ AEC-Q101 Qualified ➢ Excellent ON resistance ➢ General footprint package PDFN3333-8L ➢ 100% Rg and Avalanche tested ➢ MSL1 PRODUCT APPEARANCE ： PDFN3333-8L DESCRIPTION The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM068R2DRAQ is in compliance with RoHS.
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