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SNM067R9DNAQ - Single N-channel Power MOSFET

Description

The SNM067R9DNAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • Drain-Source Withstand Voltage: 60V.
  • Max. RDS(on) : 8.5mΩ @ VGS=-10V 13.3mΩ @ VGS=4.5V.
  • Automotive.

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Datasheet Details

Part number SNM067R9DNAQ
Manufacturer SIT
File Size 692.66 KB
Description Single N-channel Power MOSFET
Datasheet download datasheet SNM067R9DNAQ Datasheet
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SNM067R9DNAQ Single N-Channel, 60V, 57A, Power MOSFET FEATURES ➢ Drain-Source Withstand Voltage: 60V ➢ Max. RDS(on) : 8.5mΩ @ VGS=-10V 13.3mΩ @ VGS=4.5V ➢ Automotive applications ➢ AEC-Q101 Qualified ➢ Excellent ON resistance ➢ General footprint package PDFN5×6-8L ➢ 100% Rg and Avalanche tested ➢ MSL1 DESCRIPTION PRODUCT APPEARANCE ： PDFN5×6-8L The SNM067R9DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM067R9DNAQ is in compliance with RoHS.
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