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SNM041R4DNAQ - Single N-channel Power MOSFET

Description

The SNM041R4DNAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.

Features

  • Drain-Source Withstand Voltage: 40V.
  • Max. RDS(on) : 1.4mΩ @ VGS=10V.
  • Automotive.

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Datasheet Details

Part number SNM041R4DNAQ
Manufacturer SIT
File Size 698.54 KB
Description Single N-channel Power MOSFET
Datasheet download datasheet SNM041R4DNAQ Datasheet
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SNM041R4DNAQ Single N-channel, 40V, 211A, Power MOSFET FEATURES ➢ Drain-Source Withstand Voltage: 40V ➢ Max. RDS(on) : 1.4mΩ @ VGS=10V ➢ Automotive applications ➢ AEC-Q101 Qualified ➢ Excellent ON resistance ➢ General footprint package PDFN5×6-8L ➢ 100% Rg and Avalanche tested ➢ MSL1 PRODUCT APPEARANCE ： PDFN5×6-8L DESCRIPTION The SNM041R4DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SNM041R4DNAQ is in compliance with RoHS.
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