Datasheet4U Logo Datasheet4U.com

SNM067500EAQ - Single N-channel Power MOSFET

Description

The SNM067500EAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Drain-Source Withstand Voltage: 60V.
  • Max. RDS(on) : 7.5mΩ @ VGS=10V 8.0mΩ @ VGS=4.5V.
  • HBM Class 2 (6).
  • Automotive.

📥 Download Datasheet

Datasheet preview – SNM067500EAQ

Datasheet Details

Part number SNM067500EAQ
Manufacturer SIT
File Size 705.17 KB
Description Single N-channel Power MOSFET
Datasheet download datasheet SNM067500EAQ Datasheet
Additional preview pages of the SNM067500EAQ datasheet.

📁 Similar Datasheet

Other Datasheets by SIT

Full PDF Text Transcription

Click to expand full text
SNM067500EAQ Single N-channel, 60V, 212mA, Power MOSFET FEATURES ➢ Drain-Source Withstand Voltage: 60V ➢ Max. RDS(on) : 7.5mΩ @ VGS=10V 8.0mΩ @ VGS=4.5V ➢ HBM Class 2 (6) ➢ Automotive applications ➢ AEC-Q101 Qualified ➢ Excellent ON resistance ➢ Small package SOT-23 ➢ Supper high density cell design ➢ MSL1 PRODUCT APPEARANCE ： SOT-23 DESCRIPTION The SNM067500EAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product SNM067500EAQ is in compliance with RoHS.
Published: |