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SW6N60 - MOSFET

Description

These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology.

Features

  • TO-220F TO-251 TO-252.
  • High ruggedness.
  • RDS(ON) (Max 1.5Ω)@VGS=10V.
  • Gate Charge (Typical 29nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW6N60
Manufacturer SEMIPOWER
File Size 484.48 KB
Description MOSFET
Datasheet download datasheet SW6N60 Datasheet

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Full PDF Text Transcription

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SAMWIN SW6N60 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers BVDSS : 600V ID : 6A RDS(ON) :1.
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