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SW6N70DB - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 1.4Ω)@VGS=10V.
  • Low Gate Charge (Typ 30nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW6N70DB
Manufacturer Samwin
File Size 948.82 KB
Description N-channel MOSFET
Datasheet download datasheet SW6N70DB Datasheet

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Full PDF Text Transcription

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SW6N70DB N-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 30nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:LED, PC Power, Charger TO-220F TO-252 TO-251N 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 700V ID : 6A RDS(ON) : 1.
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