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SW6N60D - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220F TO-252 TO-251N.
  • High ruggedness.
  • Low RDS(ON) (Typ 1.4Ω)@VGS=10V.
  • Low Gate Charge (Typ 23nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW6N60D
Manufacturer Samwin
File Size 835.93 KB
Description N-channel MOSFET
Datasheet download datasheet SW6N60D Datasheet

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Full PDF Text Transcription

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SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 23nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: UPS,Inverter,TV-POWER 12 3 123 123 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 600V ID : 6A RDS(ON) :1.
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