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SW6N70DB - N-Channel 600V Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number SW6N70DB
Manufacturer VBsemi
File Size 322.22 KB
Description N-Channel 600V Power MOSFET
Datasheet download datasheet SW6N70DB Datasheet

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Full PDF Text Transcription

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SW6N70DB-VB TO252 SW6N70DB-VB TO252 Datasheet N-Channel 600V (D-S) Super Junction Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) 600 VGS = 10 V 0.13 Qg max.
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