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RU1HE4D - N-Channel Advanced Power MOSFET

Description

SOT-223 Applications DC-DC Converter Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature R

Features

  • 100V/4A, RDS (ON) =72mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V.
  • ESD Protected.
  • Reliable and Rugged.
  • Ultra Low On-Resistance.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU1HE4D
Manufacturer Ruichips
File Size 274.45 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE4D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1HE4D N-Channel Advanced Power MOSFET Features • 100V/4A, RDS (ON) =72mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ.) @ VGS=4.
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