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RU1HE3H - N-Channel Advanced Power MOSFET

Description

SOP-8 Applications Converters LED Backlight Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range I

Features

  • 100V/3A, RDS (ON) =135mΩ (Typ. ) @ VGS=10V RDS (ON) =150mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU1HE3H
Manufacturer Ruichips
File Size 275.86 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE3H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1HE3H N-Channel Advanced Power MOSFET MOSFET Features • 100V/3A, RDS (ON) =135mΩ (Typ.) @ VGS=10V RDS (ON) =150mΩ (Typ.) @ VGS=4.
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