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RU1HE3D - N-Channel Advanced Power MOSFET

Description

SOT-223 Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuo

Features

  • 100V/3A, RDS (ON) =130mΩ (Typ. ) @ VGS=10V RDS (ON) =140mΩ (Typ. ) @ VGS=4.5V.
  • ESD Protected.
  • Reliable and Rugged.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU1HE3D
Manufacturer Ruichips
File Size 249.81 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE3D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1HE3D N-Channel Advanced Power MOSFET MOSFET Features • 100V/3A, RDS (ON) =130mΩ (Typ.) @ VGS=10V RDS (ON) =140mΩ (Typ.) @ VGS=4.
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