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RU1HE16L - N-Channel Advanced Power MOSFET

Description

TO252 Applications

Power Management.

Features

  • 100V/16A, RDS (ON) =70mΩ(Typ. )@VGS=10V RDS (ON) =85mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU1HE16L
Manufacturer Ruichips
File Size 289.88 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE16L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1HE16L N-Channel Advanced Power MOSFET MOSFET Features • 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications • Power Management.
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