Datasheet4U Logo Datasheet4U.com

RU1HE12L - N-Channel Advanced Power MOSFET

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S

Features

  • 100V/12A, RDS (ON) =145mΩ(Typ. )@VGS=10V RDS (ON) =160mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU1HE12L
Manufacturer Ruichips
File Size 282.96 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1HE12L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU1 Fast-Recovery Rectifier Diodes Sanken electric
RU1 FAST RECOVERY RECTIFIER DIODES EIC
RU1890B04 RF Module Samsung
RU1890B04GCA RF Module Samsung
RU1890B04UAA RF Module Samsung

Other Datasheets by Ruichips

Part Number Description
RU1HE16L N-Channel Advanced Power MOSFET
RU1HE3D N-Channel Advanced Power MOSFET
RU1HE3H N-Channel Advanced Power MOSFET
RU1HE4D N-Channel Advanced Power MOSFET
RU1HE4H N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RU1HE12L N-Channel Advanced Power MOSFET MOSFET Features • 100V/12A, RDS (ON) =145mΩ(Typ.)@VGS=10V RDS (ON) =160mΩ(Typ.)@VGS=4.
Published: |