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RJK1590DP3-A0 - MOSFET

Description

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Features

  • Capable of 2.5 V gate drive.
  • Low drive current.
  • Low on-resistance RDS (on) = 1.5  typ. (at VGS = 4 V) Outline.

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Full PDF Text Transcription

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RJK1590DP3-A0 150 V - 1 A - MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS (on) = 1.5  typ. (at VGS = 4 V) Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch ch-a Tch Tstg Data Sheet R07DS1255EJ0100 Rev.1.00 Mar 30, 2015 D 1. Gate 2. Drain 3. Source 4. Drain S Value 150 10 1 4 1 1.
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