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RJK0206DPA - Silicon N Channel Power MOS FET

Description

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Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 mī— typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

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Datasheet Details

Part number RJK0206DPA
Manufacturer Renesas Technology
File Size 106.53 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0206DPA Datasheet
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Preliminary www.DataSheet4U.com Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 mī— typ.
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