RJK0214DPA - Silicon N Channel Power MOS FET

Features

Low on-resistance.
Capable of 4.5 V gate drive.
High density mounting.
Pb-free.
Halogen-free Outline.

Renesas Technology

Datasheet Details

Part number	RJK0214DPA
Manufacturer	Renesas Technology
File Size	314.14 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0214DPA Datasheet
Additional preview pages of the RJK0214DPA datasheet.

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Full PDF Text Transcription

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Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0206EJ0110 Rev.1.10 Sep 02, 2011 Applications DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.

Published: Aug 24, 2015 |