RJK005N03
..
Transistors
2.5V Drive Nch MOS FET
RJK005N03 z Structure Silicon N-channel MOS FET z External dimensions (Unit : mm)
SMT3
2.9 1.1 0.4
(3) z Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
(2)
(1)
1.6 2.8
0.95 0.95 0.15 1.9 z Applications Switching z Packaging specifications and h FE
Package Type RJK005N03 Code Basic ordering unit (pieces) Taping T146 3000
(1)Source (2)Gate (3)Drain Each lead has same dimensions Abbreviated symbol : KV z Inner circuit
(3)
0.3Min.
(2)
∗2
∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE
(1) Source (2) Gate (3) Drain z Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body Diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a remended land
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits 30 ±12 ±500 ±2.0 200 800 200 150
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