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RJK0230DPA - Silicon N Channel Power MOS FET

Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline.

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Datasheet Details

Part number RJK0230DPA
Manufacturer Renesas
File Size 239.50 KB
Description Silicon N Channel Power MOS FET
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Full PDF Text Transcription

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Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10 Sep 12, 2011 Features      Low on-resistance Capable of 4.
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