Datasheet4U Logo Datasheet4U.com

RJK0213DPA - Silicon N Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 mī— typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

📥 Download Datasheet

Datasheet preview – RJK0213DPA

Datasheet Details

Part number RJK0213DPA
Manufacturer Renesas Technology
File Size 178.82 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0213DPA Datasheet
Additional preview pages of the RJK0213DPA datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
Preliminary www.DataSheet4U.com Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 mī— typ.
Published: |