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RJK1526DPJ, RJK1526DPE, RJK1526DPF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Features
• Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)
4
: PRSS0004AE-B LDPAK(S)-(1)
4
: PRSS0004AE-C LDPAK(S)-(2) )
4
D
G 1 1 2 3 1
1. Gate 2. Drain 3. Source 4. Drain
S
2
3
2
3
RJK1526DPJ
RJK1526DPE
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