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RJK1535DPE - N-Channel Power MOSFET

Description

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Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK1535DPE 3 RJK1535DPF RJK1535DPJ 2 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation C.

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Datasheet Details

Part number RJK1535DPE
Manufacturer Renesas
File Size 163.53 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJK1535DPE Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance  Low leakage current  High speed switching REJ03G0479-0300 Rev.3.00 Jun 30, 2010 Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK1535DPE 3 RJK1535DPF RJK1535DPJ 2 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID www.
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