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RJK1056DPB - Silicon N Channel Power MOS FET

Description

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Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Datasheet Details

Part number RJK1056DPB
Manufacturer Renesas Technology
File Size 145.90 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK1056DPB Datasheet
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RJK1056DPB 100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1059EJ0200 (Previous: REJ03G1888-0100) Rev.2.
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