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RJK1008DPE
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1629-0100 Rev.1.00 Apr 03, 2008
Features
• VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID : 80 A
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4 1. Gate 2. Drain 3. Source 4. Drain
2, 4 D
1
1 G 2 3
S 3
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Application
• Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25°C 2.
RJK1008DPE Datasheet
