Datasheet4U Logo Datasheet4U.com

RJK1575DPA - MOSFET

Datasheet Summary

Features

  • Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C).
  • Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C).
  • Low leakage current.
  • High speed switching Outline Preliminary Datasheet R07DS0858EJ0200 Rev.2.00 Jan 08, 2013.

📥 Download Datasheet

Datasheet preview – RJK1575DPA

Datasheet Details

Part number RJK1575DPA
Manufacturer Renesas
File Size 90.64 KB
Description MOSFET
Datasheet download datasheet RJK1575DPA Datasheet
Additional preview pages of the RJK1575DPA datasheet.

📁 Similar Datasheet

  • RJK1525DPS - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK1001DPN-E0 - N-Channel MOSFET (Renesas Technology)
  • RJK1002DPN-E0 - N-Channel MOS FET (Renesas Technology)
  • RJK1021DPN - N-Channel 100V MOSFET (VBsemi)
  • RJK1055DPB - Silicon N-Channel MOSFET (Renesas Technology)
  • RJK1056DPB - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK005N03 - Drive Nch MOS FET (Rohm)
  • RJK005N03FRA - Nch 30V 500mA Small Signal MOSFET (Rohm)
  • RJK0204DPA - Silicon N Channel Power MOS FET (Renesas Technology)
  • RJK0206DPA - Silicon N Channel Power MOS FET (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching Features  Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)  Low leakage current  High speed switching Outline Preliminary Datasheet R07DS0858EJ0200 Rev.2.
Published: |