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HAT2170H
Silicon N Channel MOS FET Power Switching
Features
• High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 3.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
4 G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAPNote2 EARNote2 PchNote3 θch-C
Tch
Tstg
REJ03G0121-0500 Rev.5.
HAT2170H Datasheet
