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HAT2173N
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 12.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S) 2(S) 3(S)
4(G)
2XXX
8(D)
7(D) 6(D) 5(D)
4 G
5678 DDDD
SSS 12 3
REJ03G1684-0100 Rev.1.00
May 28, 2008
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
HAT2173N Datasheet
