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HAT2131R - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Low drive current.
  • High density mounting.
  • Capable of 4 V gate drive Outline.

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Datasheet Details

Part number HAT2131R
Manufacturer Renesas
File Size 114.24 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2131R Datasheet

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Full PDF Text Transcription

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HAT2131R Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting • Capable of 4 V gate drive Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 1 234 4 G 5678 DDDD SSS 123 REJ03G1815-0100 Rev.1.00 Jul 17, 2009 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 Pch Note2 350 ±20 0.9 7.2 0.9 7.2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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