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HAT2134H
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS (on) = 2.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1234
5 D
S SS 1 23
REJ03G1190-0300 (Previous: ADE-208-1578A)
Rev.3.00 Sep 07, 2005
1, 2, 3 4 5
Source Gate Drain
Rev.3.00 Sep 07, 2005 page 1 of 3
HAT2134H
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C 3.
HAT2134H Datasheet
