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HAT2142H - Silicon N-Channel Power MOSFET

Features

  • Capable of 7 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS (on) = 35 mΩ typ. (at VGS = 10 V) Outline.

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Datasheet Details

Part number HAT2142H
Manufacturer Renesas
File Size 101.64 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2142H Datasheet

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Full PDF Text Transcription

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HAT2142H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 35 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 Preliminary REJ03G1194-0800 Rev.8.00 Jul 29, 2009 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C 3.
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