High speed switching
Outline
TO-220FN
D
G
1. Gate 2. Drain 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW.
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H5N2901FN
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0372-0100Z Rev.1.00 May.28.2004
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-220FN
D
G
1. Gate 2. Drain 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H5N2901FN Datasheet
