Datasheet4U Logo Datasheet4U.com

H5N2801P - Silicon N Channel MOS FET High Speed Power Switching

Features

  • Low on-resistance.
  • Low drive current.
  • High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Body-drain diode reverse drain Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 Note3 EAR Rating 280 ±30 60 240 60 35 74.5 150 0.833 150.
  • 55 to +1.

📥 Download Datasheet

Datasheet Details

Part number H5N2801P
Manufacturer Renesas
File Size 142.45 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2801P Datasheet

📁 Similar Datasheet

  • H5N2005DL - MOSFET (Renesas)
  • H5N2005DL - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
  • H5N2005DS - MOSFET (Renesas)
  • H5N2005DS - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
  • H5N2509P - Silicon N-Channel MOSFET (Hitachi)
  • H5N2509P - Silicon N-Channel MOSFET (Renesas)
  • H5N2901FL-M0 - MOSFET (Renesas)
  • H5N3011P - N-Channel MOSFET (INCHANGE)
  • H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
  • H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
Other Datasheets by Renesas Technology
  • H5N2802PF - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2803PF - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2001LD - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2001LM - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2001LS - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2003P - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2004DS - Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription

Click to expand full text
H5N2801P Silicon N Channel MOS FET High Speed Power Switching REJ03G0118-0100Z Rev.1.00 Oct.01.2003 www.DataSheet4U.com Features • Low on-resistance • Low drive current • High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Body-drain diode reverse drain Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 Note3 EAR Rating 280 ±30 60 240 60 35 74.5 150 0.
Published: |