H5N2517FN - Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching
Outline
TO-220FN
D
G
1. Gate 2. Drain 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage tempe.
H5N2513PL- Silicon N Channel MOS FET High Speed Power Switching
H5N2514P- Silicon N Channel MOS FET High Speed Power Switching
H5N2515P- Silicon N Channel MOS FET High Speed Power Switching
H5N2519P- Silicon N Channel MOS FET High Speed Power Switching
Full PDF Text Transcription
Click to expand full text
H5N2517FN
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0371-0100Z Rev.1.00 May.28.2004
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching
Outline
TO-220FN
D
G
1. Gate 2. Drain 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H5N2517FN Datasheet
