H5N2512CF - Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance.
Low leakage current www. DataSheet4U. com.
High Speed Switching.
Built-in fast recovery diode
Outline
TO-220CFM
D
G
1. Gate 2. Drain 3. Source
1 S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temp.
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Full PDF Text Transcription
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H5N2512CF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0481-0100 Rev.1.00 Nov.26.2004
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High Speed Switching • Built-in fast recovery diode
Outline
TO-220CFM
D
G
1. Gate 2. Drain 3. Source
1 S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H5N2512CF Datasheet
