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H5N2510DL, H5N2510DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005
Features
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• Low on-resistance drive current • High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 4
H5N2510DL, H5N2510DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal Impedance Channel temperature
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H5N2510DL Datasheet
