Datasheet4U Logo Datasheet4U.com

H5N2508DL - Silicon N Channel MOS FET High Speed Power Switching

Features

  • www. DataSheet4U. com.
  • Low.
  • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
  • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A).
  • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A).
  • Avalanche ratings Outline.

📥 Download Datasheet

Datasheet Details

Part number H5N2508DL
Manufacturer Renesas
File Size 126.34 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2508DL Datasheet

📁 Similar Datasheet

  • H5N2509P - Silicon N-Channel MOSFET (Hitachi)
  • H5N2509P - Silicon N-Channel MOSFET (Renesas)
  • H5N2005DL - MOSFET (Renesas)
  • H5N2005DL - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
  • H5N2005DS - MOSFET (Renesas)
  • H5N2005DS - Silicon N Channel MOS FET High Speed Power Switching (Hitachi Semiconductor)
  • H5N2901FL-M0 - MOSFET (Renesas)
  • H5N3011P - N-Channel MOSFET (INCHANGE)
  • H5N5001FM - Silicon N-Channel MOSFET (Hitachi)
  • H5N5004PL - Silicon N-Channel MOSFET (Hitachi)
Other Datasheets by Renesas Technology
  • H5N2508DS - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2501LD - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2501LM - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2501LS - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2502CF - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2503P - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2504DL - Silicon N Channel MOS FET High Speed Power Switching
  • H5N2504DS - Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription

Click to expand full text
H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.
Published: |