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H5N2503P - Silicon N Channel MOS FET High Speed Power Switching

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Features

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  • Low.
  • Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
  • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A).
  • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A).
  • Avalanche ratings Outline.

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Datasheet Details

Part number H5N2503P
Manufacturer Renesas Technology
File Size 121.46 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2503P Datasheet
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Full PDF Text Transcription

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H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Rev.2.
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