H5N2502CF - Silicon N Channel MOS FET High Speed Power Switching
Datasheet Summary
Features
Low on-resistance.
Low leakage current www. DataSheet4U. com.
High Speed Switching
Outline
TO-220CFM
D
G
1. Gate 2. Drain 3. Source
1 S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. P.
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H5N2502CF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0480-0100 Rev.1.00 Nov.26.2004
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High Speed Switching
Outline
TO-220CFM
D
G
1. Gate 2. Drain 3. Source
1 S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IDR(pulse) Note 1 IAP Note 3 Pch Note 2 θch-c Tch Tstg Ratings 250 ±30 18 72 18 72 18 35 3.
H5N2502CF Datasheet
