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H5N2306PF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0031-0200Z Rev.2.00 Jun.25.2004
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching
Outline
TO-3PFM
D
G 1 S 1. Gate 2. Drain 3. Source
2
3
Rev.2.00, Jun.25.2004, page 1 of 9
H5N2306PF
Absolute Maximum Rating
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 30 160 30 160 15 60 2.08 150 –55 to +150 Rating V V A A A A A W °C/W °C °C Unit
Avalanche current IAP Note3 Channel dissipation Pch Note2 www.DataSheet4U.
H5N2306PF Datasheet
