250 um GaAs pHEMT
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QPD2025D
®
250 um Discrete GaAs pHEMT
Absolute Maximum Ratings1
Parameter
Absolute
Continuous
Units
Drain-Source Voltage (VDS)(2)
12
8
V
Gate-Source Voltage (VGS)
-7
-3
V
Drain Current (IDS)(2)
IDSS
IDSS
mA
Forward Gate Current (IG,F)
12
Features
advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. QPD2025D
250 um Discrete GaAs pHEMT
The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency.
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®
Product Overview
The Qorvo QPD2025D is a discrete 250 micron pHEMT which operates from DC to 20 GHz. The QPD2025D is fabricated using Qorvo’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
QPD2025D
250 um Discrete GaAs pHEMT
The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
The QPD2025D is lead-free and RoHS compliant.
QPD2025D Datasheet
