QPD0030 - GaN RF Power Transistor

Datasheet Summary

Description

Short Reel 100 Pieces 7” Reel 500 pieces 1.2 1.4 GHz Evaluation Board 1.8 2.2 GHz Evaluation Board 1 of 12 www.qorvo.com QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Parameter Rating Breakdown Voltage (BVDG) +16

Features

Operating Frequency Range: DC to 5 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (PSAT): 49.0 W (1).
Maximum Drain Efficiency: 71.9% (1).
Efficiency-Tuned P3dB Gain: 22.1 dB (1).
Surface Mount Plastic Package Functional Block Diagram Notes: 1. Load pull performance at 2.2 GHz.

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Datasheet Details

Part number	QPD0030
Manufacturer	qorvo
File Size	1.04 MB
Description	GaN RF Power Transistor
Datasheet	QPD0030 Datasheet
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Full PDF Text Transcription

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QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4x3 mm surface mount QFN package. Lead-free and ROHS compliant.

Published: Mar 5, 2025 |