QPD0005M - GaN RF Transistor

Datasheet Summary

Description

Short Reel 100 Pieces 3.4 3.6 GHz Evaluation Board 3.2 3.8 GHz Evaluation Board 3.7 4.0 GHz Evaluation Board 2.5

Data Sheet Rev.

Features

Operating Frequency Range: 2.5.
5.0 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (PSAT): 39.1 dBm (1).
Maximum Drain Efficiency: 71.4% (1).
Efficiency-Tuned P3dB Gain: 17.8 dB (1).
4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.6 GHz Functional Block Diagram.

Qorvo

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Datasheet Details

Part number	QPD0005M
Manufacturer	Qorvo
File Size	1.60 MB
Description	GaN RF Transistor
Datasheet	QPD0005M Datasheet
Additional preview pages of the QPD0005M datasheet.

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Full PDF Text Transcription

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QPD0005M ® 8 W, 48 V, 2.5 – 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8 W at +48 V operation. Lead free and RoHS compliant. 6 Pin 4.5 x 4.0 mm DFN Package Key Features  Operating Frequency Range: 2.5 – 5.0 GHz  Operating Drain Voltage: +48 V  Maximum Output Power (PSAT): 39.1 dBm (1)  Maximum Drain Efficiency: 71.4% (1)  Efficiency-Tuned P3dB Gain: 17.8 dB (1)  4.5 x 4.0 mm DFN Package Notes: 1. Load pull at 3.

Published: Jan 10, 2025 |