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QPD0030 - RF Power Transistor

Datasheet Summary

Description

The QPD0030 is a wide band over-molded QFN discrete power amplifier.

The device is a single stage unmatched power amplifier transistor.

The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems.

Features

  • Operating Frequency Range: DC to 4 GHz.
  • Operating Drain Voltage: 48 V.
  • Maximum Output Power (PSAT): 49 W.
  • Maximum Drain Efficiency: 72.5%.
  • Efficiency-Tuned P3dB Gain: 21.7 dB.
  • Surface Mount Plastic Overmold package Functional Block Diagram General.

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Datasheet preview – QPD0030

Datasheet Details

Part number QPD0030
Manufacturer TriQuint Semiconductor
File Size 461.67 KB
Description RF Power Transistor
Datasheet download datasheet QPD0030 Datasheet
Additional preview pages of the QPD0030 datasheet.

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Full PDF Text Transcription

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Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Applications QPD0030 45 W, DC to 4 GHz 48V GaN RF Power Transistor 20 Pin 3x4mm QFN Product Features • Operating Frequency Range: DC to 4 GHz • Operating Drain Voltage: 48 V • Maximum Output Power (PSAT): 49 W • Maximum Drain Efficiency: 72.5% • Efficiency-Tuned P3dB Gain: 21.7 dB • Surface Mount Plastic Overmold package Functional Block Diagram General Description The QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.
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