QPD0305 - Dual GaN RF Transistor

Datasheet Summary

Description

2 Pieces 5 Pieces 25 Pieces 7” Reel 100 Pieces Short Reel 500 Pieces 13” Reel 2500 Pieces 1 of 9 www.qorvo.com QPD0305 ® 2x20 W, 48 V, 3.4 3.8 GHz, Dual GaN RF Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Brea

Features

Operating Frequency Range: 3.4.
3.8 GHz.
Operating Drain Voltage: +48 V.
Maximum Output Power (P3dB): 25.1 W (1).
Maximum Drain Efficiency: 79.4% (1).
Efficiency-Tuned P3dB Gain: 18.9 dB (1).
7 x 6.5 mm DFN Package Notes: 1. Single-path load pull data at 3.6 GHz. Functional Block Diagram.

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Datasheet Details

Part number	QPD0305
Manufacturer	Qorvo
File Size	1.25 MB
Description	Dual GaN RF Transistor
Datasheet	QPD0305 Datasheet
Additional preview pages of the QPD0305 datasheet.

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Full PDF Text Transcription

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QPD0305 ® 2x20 W, 48 V, 3.4 – 3.8 GHz, Dual GaN RF Transistor Product Overview The QPD0305 is a dual-path GaN power amplifier in a DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor capable of delivering PSAT of 25.1 W at +48 V operation. Lead-free and RoHS compliant. 6 Pin 7 x 6.5 mm DFN Package Key Features • Operating Frequency Range: 3.4 – 3.8 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (P3dB): 25.1 W (1) • Maximum Drain Efficiency: 79.4% (1) • Efficiency-Tuned P3dB Gain: 18.9 dB (1) • 7 x 6.5 mm DFN Package Notes: 1. Single-path load pull data at 3.6 GHz.

Published: Mar 4, 2025 |