Click to expand full text
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.3@ VGS=4.5V
0.6
PNMUT20V06 N-Channel MOSFET
D（3）
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS
ID =250μA,VGS=0V
IDSS VDS =20V,VGS=0V
IGSS VDS =0V,VGS=±10V
VGS(th)
VDS =VGS, ID =250μA
VGS=4.5V, ID =0.6A
RDS(ON)
VGS=2.5V, ID =0.5A
VGS=1.8V, ID =0.
PNMUT20V06 Datasheet
