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LNA2802L - GaAs Infrared Light Emitting Diode

Key Features

  • High-power output, high-efficiency : PO = 5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • Symbol PD IF IFP.
  • VR Topr Tstg Ratings 75 50 1 3.
  • 25.

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Datasheet Details

Part number LNA2802L
Manufacturer Panasonic
File Size 40.41 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LNA2802L Datasheet

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Full PDF Text Transcription (Reference)

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Infrared Light Emitting Diodes LNA2802L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 For optical control systems Features High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1.7 Absolute Maximum Ratings (Ta = 25˚C) 15.0±1.0 4.5±0.3 5.0±0.2 0.