LNA2801L - GaAlAs on GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LNA2801L
Manufacturer	Panasonic Semiconductor
File Size	40.23 KB
Description	GaAlAs on GaAs Infrared Light Emitting Diode
Datasheet	LNA2801L Datasheet
Additional preview pages of the LNA2801L datasheet.

High-power output, high-efficiency : Ie = 6 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 75 50 1 3.
25 to +85.
40 to +100 Unit mW mA A V ˚C ˚.

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Published: Mar 22, 2005 |