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LNA2701L - GaAs Bi-directional Infrared Light Emitting Diode

Key Features

  • Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min. ) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-R0.7 8˚ 0.15 2-0.7 max. 2-0.5±0.1 (1.5).

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Datasheet Details

Part number LNA2701L
Manufacturer Panasonic
File Size 43.97 KB
Description GaAs Bi-directional Infrared Light Emitting Diode
Datasheet download datasheet LNA2701L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-R0.7 8˚ 0.15 2-0.7 max. 2-0.5±0.1 (1.5) Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.5±0.1 2 1 2.