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LNA2606L - GaAlAs on GaAs Infrared Light Emitting Diode

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Panasonic Semiconductor

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LNA2606L GaAlAs on GaAs Infrared Light Emitting Diode by Panasonic Semiconductor - Datasheet Preview — Datasheet preview – LNA2606L

Datasheet Details

Part number	LNA2606L
Manufacturer	Panasonic Semiconductor
File Size	21.54 KB
Description	GaAlAs on GaAs Infrared Light Emitting Diode
Datasheet	LNA2606L Datasheet
Additional preview pages of the LNA2606L datasheet.

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Features

High-power output, high-efficiency: PO = 9 mW min.
Emitted light spectrum suited for silicon photodetectors.
Ultra-miniature, thin side-view type package.
Long lifetime, high reliability 1.95±0.25 3.0±0.3 0.8 φ1.1 R0.5 1.4±0.2 0.9 0.5 3.5±0.3 12 min. 2.4 1.1 Not soldered 2.15 max. 1.1 2.
0.5±0.15 0.3±0.15 s Absolute Maximum Ratings Ta = 25°C Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating.

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Published: Mar 22, 2005 |