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LNA2601L - GaAs Infrared Light Emitting Diode

Key Features

  • High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

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Datasheet Details

Part number LNA2601L
Manufacturer Panasonic
File Size 41.84 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LNA2601L Datasheet

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Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.